Research and Markets (http://www.researchandmarkets.com/reports/c83084) has announced the addition of “Infineon vs. CREE 6 Amp SiC Schottky Diode Teardown and Technology Analysis” to their offering.
MuAnalysis teardown report of their investigation of these two main SiC products currently available in the market place.
The report exhibits a complete physical and chemical analysis of the 2 following device references:
- Infineon IDC06S60C
- CREE CSD06060 in TO263-2 package
MuAnalysis has used a large variety of analytical techniques including Optical Beam Induced Current (OBIC), electron microscopy as well as Raman and FTIR spectroscopy to probe the insides of these high power diodes and reveal their secrets. Schottky contact, passivation, edge structure, back contact, crystalline orientation are described in detail with plenty of photos, tables and graphs.
Topics Covered:
Product Identification
External appearance and Principal Dimensions
Package
- Encapsulation
- Leadframe structure and material
- Die attach
- Wirebonding
Semiconductor Die
- Dimensions, Thickness
- Die photo
- Materials and Structure
- Substrate/epi-layer
- Schottky contact
- Passivation
- Edge structure
- Back contact
Electronic Structure
- OBIC Analysis
- Raman Spectroscopy
For more information, visit http://www.researchandmarkets.com/reports/c83084
Contacts:
Laura Wood, press@researchandmarkets.com
fax:
+353 1 4100 980
