Trimethylgallium (TMG) Market Segment Forecast Up to 2020

Albany, NY -- (ReleaseWire) -- 04/07/2015 -- Chemical beam epitaxy (CBE) is now recognized as a powerful growth technique for the realization of GaAs based heterojunction bipolar transistor devices. This because the capability of CBE to produce extremely high and stable p-type C-doping concentrations in GaAs using Trimethylgallium (TMG). Trimethylgallium (TMG), also known as TMG and TMGa is a favored metalorganic basis of gallium for metalorganic vapor phase epitaxy (MOVPE) of gallium-containing semiconductor, such as GaAs, GaP, GaSb, GaN, InGaAs and InGaN among others. It is available in nature in trace amounts in bauxite and zinc ores. It is a colorless, clear pyrophoic liquid. TMG has boiling point of 60 degree celcius. It reacts violently with compounds that provide active hydrogen and water. The hydrocarbon solutions of TMG, when saturated are known to catch fire when exposed to air. Hence, TMG is handled with utmost care and stored in a cool and dry place under inert atmospheres. TMG is prepared by the reaction of dimethylzinc with gallium trichloride. The most competitive base material for the production of semiconductor is gallium.