Latest GaAs pHEMT Amplifier Provides Outstanding Linearity and Compression Over Large Fractional Bandwidths, Enabling Multi-Carrier 5G & 4G Transmitters

Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of its new GRF5112, a highly linear, broadband power amplifier that excels in delivering excellent compression performance over large fractional bandwidths of up to 40 percent. The GRF5112’s broad, single-tuned responses enable multicarrier base stations to simultaneously transmit across two or more cellular bands using a single RF lineup.

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Guerrilla RF, Inc. announces the formal release of its new GRF5112, a highly linear, broadband power amplifier that excels in delivering excellent compression performance over large fractional bandwidths of up to 40 percent. The GRF5112’s broad, single-tuned responses are ideal for cellular base station designs that integrate multiple bands into single transmit lineups. (Graphic: Business Wire)

“The GRF5112 is another example of Guerrilla RF constantly working to improve its driver amplifier offering,” says Jim Ahne, vice president of marketing at Guerrilla RF. “Building upon the GRF5115 core, this latest iteration streamlines tuning while ensuring consistent performance across process and temperature variations. Our design team has also integrated additional tuning handles within the core to optimize linearity for specific bands and bias conditions.”

The GRF5112 can be tuned to operate over select bands within the 30 to 2700 MHz frequency range. When operated at 1.8 GHz, the device delivers 17.1 dB of gain, 32.2 dBm of OP1dB compression, 40 dBm of OIP3 linearity, and a low noise figure of 1.7 dB (as measured on the device’s standard evaluation board; de-embedded NF values are approximately 0.2dB lower). Like other GRF amplifier cores, the GRF5112 features a flexible biasing architecture allowing customizable trade-offs between linearity and power consumption. Supply voltages can vary between 1.8 and 5.25 V, although most customers will elect to use a standard 5V supply with 212 mA of biasing current.

Packaged in a compact 3 x 3 mm QFN-16 package, the GRF5112 shares a pinout and matching layout with many of the company’s linear drivers and power amplifier cores.

Pricing and Availability

Samples and evaluation boards are available for the GRF5112. Prices start at $1.47 (10,000-up, EXW USA). Additional details are available here.

About Guerrilla RF, Inc.

Founded in 2013 and based in Greensboro, NC, Guerrilla RF develops and manufactures high-performance monolithic microwave integrated circuits (MMICs) to wireless OEMs in multiple market segments – including 5G/4G macro and small cell base stations, cellular repeaters/DAS, automotive telematics such as SDARS/V2X/GPS/DAB, military communications, navigation, and high-fidelity wireless audio. Guerrilla RF has an extensive portfolio of over 100 high-performance radio frequency (RF) and microwave semiconductor devices. The existing product line includes ultra-low noise amplifiers, gain blocks, driver amplifiers, mixers, RF switches, digital step attenuators (DSAs), and linear power amplifiers (PAs) – the critical building blocks for mission-critical, performance-driven wireless applications. The company has shipped over 200 million devices and has repeatedly been included in Inc. Magazine's annual Inc. 5000 list. Before becoming a public company in late 2021, Guerrilla RF made the top Inc. 500 list for two years, coming in at No. 421 and 489 for the 2020 and 2021 rankings, respectively. For more information, please visit www.guerrilla-rf.com or follow the company on Twitter and LinkedIn.

Forward-Looking Statements

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